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What is High Power Good Performance RF GaN Transistor for RF Microwave Systems and Base Station Application and Radar or Drone Jammer Module with Built-in GaN
Price
Min. Order Reference FOB Price
10 Pieces US$1.00 / Piece
Sepcifications
- Application Radio, RF Energy
- Batch Number 2025
- Certification CE, RoHS
- Manufacturing Technology Discrete Device
- Material GaN
- Model GaN
- Package SMD
- Signal Processing Analog Digital Composite and Function
- Type RF High Power
- Transport Package Reel/Tape
- Specification other
- Trademark Eversmart
- Origin China
- High Power 450W
- Operation Temperature up to 150degree
- Frequency Band 2000MHz-18000MHz
- Feature Wideband
- Sample Size 1-2PCS
Product Description
Product Description 1. Product Introduction The HEF2H2040 - 370EF is a pre - matched broadband power transistor. It is a GaN device fabricated based on fully domestic materials and processes. The available operating frequency range is 2.0 - 4.0 GHz. It can work well at high temperature and has very ...
