Parallel Vf Silicon Chip Zp4000/25-35 Diodes for Line Frequency

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Price

Min. Order Reference FOB Price

10 Pieces US$100.00 / Piece

Sepcifications

Application Diode, Industry
Batch Number 2021+
Manufacturing Technology Discrete Device
Material Element Semiconductor
Model Zp4000/25-35
Package SMD
Signal Processing Analog Digital Composite and Function
Type P-Type Semiconductor
Transport Package Carton Box Depended on Qty
Specification packing box 400*300*200
Trademark SAILTON
Origin China
Chip Silicon
Brand Sailton

Product Description

Parallel VF silicon chip ZP4000/25-35 diodes for line frequency Rectifier diode,also named rectifying diode,include standard rectifier diode,power diode,fast recovery diode,high current diode. We manufacture and export a wide range of rectifier diodes, current range from 500A-6500A, ...

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Sailing Commercial (Tianjin) Co., Ltd.

Diamond Member Since 2018

Audited Supplier

Rating & Reviews: 5.0/5.0

(26 Reviews)

Main Products Thyristor, Water Cooling Power Cable, Welding Diode, Semiconductor Device, High Voltage ...
Year of Establishment 2017-11-15
Repeat Buyers Choice 80%~100%
Address 411, Xingpin Building, Linke East Road, Hedong Dist, Tianjin, China
Main Markets North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic
Supply Chain Partners 30

Zp4000A 2500V Comparison

	Parallel Vf Silicon Chip Zp4000/25-35 Diodes for Line Frequency Contact Now	Quick View 6inch Wafer P-Type 150mm 100A Oxidized Silicon Wafer Contact Now	Quick View 8 Inch N/P Type Polished Silicon 200mm 300A Wafer Silicon Oxide Wafer Contact Now	Quick View 6 Inch P Type Polished Epi Wafer 300A Silicon Oxide Wafer Contact Now	Quick View 8 Inch Monocrystalline N Type Silicon Oxide Wafers Contact Now

Transaction Info
	Parallel Vf Silicon Chip Zp4000/25-35 Diodes for Line Frequency Contact Now	Quick View 6inch Wafer P-Type 150mm 100A Oxidized Silicon Wafer Contact Now	Quick View 8 Inch N/P Type Polished Silicon 200mm 300A Wafer Silicon Oxide Wafer Contact Now	Quick View 6 Inch P Type Polished Epi Wafer 300A Silicon Oxide Wafer Contact Now	Quick View 8 Inch Monocrystalline N Type Silicon Oxide Wafers Contact Now
Price	US$100.00 / Piece	US$35.00-40.00 / pc	US$35.00-40.00 / pc	US$35.00-40.00 / pc	US$36.00-41.00 / pc
Min Order	10 Pieces	100 pc	100 pc	100 pc	100 pc
Payment Terms	LC, T/T	T/T, PayPal	T/T, PayPal	T/T, PayPal	T/T, PayPal
Quality Control
Management System Certification	-	-	-	-	-
Trade Capacity
Export Markets	North America, South America, Europe, Southeast Asia/ Mideast, Africa, East Asia(Japan/ South Korea), Australia, Domestic	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)
Annual Export Revenue	-	-	-	-	-
Business Model	OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM
Average Lead Time	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Application: Diode, Industry; Batch Number: 2021+; Manufacturing Technology: Discrete Device; Material: Element Semiconductor; Model: Zp4000/25-35; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: P-Type Semiconductor; Chip: Silicon; Brand: Sailton;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 150±0.3mm; Thickness: 675±25mm; Oxide Thickness: 100A; Ttv: ≤10μm; Warp: ≤30μm; Bow: ≤30μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 200±0.2mm; Thickness: 725±25mm; Oxide Thickness: 300A; Ttv: ≤25μm; Warp: ≤40μm; Bow: ≤40μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 150±0.3mm; Thickness: 675±25mm; Oxide Thickness: 300A; Ttv: ≤10μm; Warp: ≤30μm; Bow: ≤30μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100Ω; Front Side: Polished; Backside: Etched; Diameter: 200±0.2mm; Thickness: 725±25mm; Oxide Thickness: 5000A; Ttv: ≤25μm; Warp: ≤40μm; Bow: ≤40μm;
Supplier Name	Sailing Commercial (Tianjin) Co., Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.	Fine Silicon Manufacturing(Shanghai)Ltd.
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