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What is Advance High Performance GaN RF Power Transistor for Base Stations and Multi Carrier Applications
Price
Min. Order Reference FOB Price
100 Pieces US$1.00 / Piece
Sepcifications
- Application Radio, RF Energy
- Batch Number 2025
- Certification CE, RoHS
- Manufacturing Technology Discrete Device
- Material GaN
- Model GaN
- Package SMD
- Signal Processing Analog Digital Composite and Function
- Type P-Type Semiconductor
- Transport Package Reel/Tape
- Specification other
- Trademark Eversmart
- Origin China
- High Power 20W to 600W
- Operation Temperature up to 150degree
- Frequency Band 433 MHz to 18000 MHz
- Feature Ultra Wide Band
Product Description
Product Description 1. Product Introduction The HM1G3600-450N is a 450W RF GaN HEMT Transistor with first generation RF GaN technology from Eversmart, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz. 2. Features and benefits 1) High efficiency, high ...
