What is 10A 45V Schottky Barrier Diode Mbr1045CT to-220m

Name: 10A 45V Schottky Barrier Diode Mbr1045CT to-220m
Uploaded: 2026-01-07T03:47:05+08:00
Description: SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature capabiliy

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Price

Min. Order Reference FOB Price

5,000 Pieces US$0.01-1.50 / Piece

Sepcifications

Application Diode, Switching Power Supply
Batch Number 2021
Manufacturing Technology Discrete Device
Material Silicon
Model Mbr1045CT
Package to-220m
Type P-Type Semiconductor
Transport Package Tube
Trademark WXDH
Origin Wuxi, China
Voltage 45V
Current 10A
Brand Wxdh

Product Description

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche ...

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Jiangsu Donghai Semiconductor Co.,Ltd

Diamond Member Since 2021

Audited Supplier

Business Type Manufacturer/Factory & Trading Company
Main Products Mosfets, Diodes, IGBT, Transistor, Thyristor, IC, SIC Mosfet, SIC Diode
Year of Establishment 2004-12-07
Number of Employees 234
Management System Certification IATF16949
Address No. 88 Zhongtong Road, Shuofang Industry Park, New District, Wuxi, Jiangsu, China

Diode Comparison

	10A 45V Schottky Barrier Diode Mbr1045CT to-220m Contact Now	Quick View Custom High Quality 6 Inch Silicon Dummy Wafer for Semiconductor Contact Now	Quick View Polished 76mm N/P Type Test Silicon Wafer Contact Now	Quick View N/P Type 2inch 3inch Testing Grade Silicon Wafer Contact Now	Quick View High Power Good Performance RF GaN Transistor for RF Microwave Systems and Base Station Application and Radar or Drone Jammer Module with Built-in GaN Contact Now

Transaction Info
	10A 45V Schottky Barrier Diode Mbr1045CT to-220m Contact Now	Quick View Custom High Quality 6 Inch Silicon Dummy Wafer for Semiconductor Contact Now	Quick View Polished 76mm N/P Type Test Silicon Wafer Contact Now	Quick View N/P Type 2inch 3inch Testing Grade Silicon Wafer Contact Now	Quick View High Power Good Performance RF GaN Transistor for RF Microwave Systems and Base Station Application and Radar or Drone Jammer Module with Built-in GaN Contact Now
Price	US$0.01-1.50 / Piece	US$5.00-10.00 / pc	US$7.00-12.00 / pc	US$5.00-10.00 / pc	US$1.00 / Piece
Min Order	5,000 Pieces	100 pc	100 pc	100 pc	10 Pieces
Payment Terms	LC, T/T, D/P, PayPal, Western Union, Small-amount payment	T/T, PayPal	T/T, PayPal	T/T, PayPal	-
Quality Control
Product Certification	-	-	-	-	CE, RoHS
Management System Certification	IATF16949	-	-	-	-
Trade Capacity
Export Markets	South Asia	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	Southeast Asia/ Mideast, East Asia(Japan/ South Korea)	North America, South America, Eastern Europe, Southeast Asia, Africa, Oceania, Mid East, Eastern Asia, Western Europe
Annual Export Revenue	-	-	-	-	-
Business Model	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	Own Brand, ODM, OEM	-
Average Lead Time	Peak Season Lead Time: one month Off Season Lead Time: one month	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays	Peak Season Lead Time: within 15 workdays Off Season Lead Time: within 15 workdays
Product Attributes
Specification	Application: Diode, Switching Power Supply; Batch Number: 2021; Manufacturing Technology: Discrete Device; Material: Silicon; Model: Mbr1045CT; Package: to-220m; Type: P-Type Semiconductor; Voltage: 45V; Current: 10A; Brand: Wxdh;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100ω; Frront Side: Polished; Edge: Polished; Diameter: 150±0.2mm; Thickness: 675±25μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100ω; Frront Side: Polished; Edge: Polished; Diameter: 76±0.2mm; Thickness: 380±25μm;	Application: Semi Standard; Material: Compound Semiconductor; Type: P-Type Semiconductor; Growth Method: CZ; Crystal Orientation: 100; Dopant: Boron; Resistivity: 1-100ω; Frront Side: Polished; Edge: Polished; Diameter: 50±0.2mm; Thickness: 280±25μm;	Application: Radio, RF Energy; Batch Number: 2025; Manufacturing Technology: Discrete Device; Material: GaN; Model: GaN; Package: SMD; Signal Processing: Analog Digital Composite and Function; Type: RF High Power; High Power: 450W; Operation Temperature: up to 150degree; Frequency Band: 2000MHz-18000MHz; Feature: Wideband; Sample Size: 1-2PCS;
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