| Specification |
Application: Power Electronic Components, Temperature Measurement, Welding Machine;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: Inverter, Induction Heating, Chopper, UPS Power;
Package: Surface Mount/Through Hole;
Signal Processing: Single/Array;
Type: Intrinsic Semiconductor;
Chip Type: Fast Thyristor Rectifier Moudles;
Voltage Range: 600V-5000V;
Install: Parallel, Series;
General Feature: Isolated Mounting Base;
Media Available: Datasheet, Photo;
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Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
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Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
|
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
|
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
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