| Specification |
Type: Weighing Sensor, Diffuse Reflection Type Photoelectric Sensor;
Output Signal Type: Analog Type, Switching Type;
Production Process: Integration, Normal Wirewound;
Material: Metal;
Feature: Low Temperature Resistant, Conductor;
IP Rating: IP56, IP65;
Customized: Customized;
Model: Lm18;
Composition: Fundamental Form;
Measured Substance: Physical Model;
Output: Switching Sensor;
Usage: Position Sensor;
Theory: Magnetic Sensor;
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Type: Reflective Panels Type Photoelectric Sensor;
Output Signal Type: Relay Output;
Production Process: Normal Wirewound;
Material: ABS+PC;
Feature: SemiConductor;
IP Rating: IP67;
Customized: Customized;
Action Mode: Light on/Dark on;
Stable and Over-Length Sensing Range: Anti-Interference;
Customization: Customization;
Detecting Object: Transparent, Translucent, Opaque Objects;
Light Source Wavelength: 650nm;
Detect Distance: 0.1~1.5m;
Light Source Type: Infrared;
Sensitivity: The Detection Distance Is Adjusted by Potentiomete;
Light: Infrared LED (Modulated Light);
Supply Voltage: 12~240V DC/AC;
Detection Distance: 60m;
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Type: Reflective Panels Type Photoelectric Sensor;
Output Signal Type: Relay Output;
Production Process: Normal Wirewound;
Material: ABS+PC;
Feature: SemiConductor;
IP Rating: IP67;
Customized: Customized;
Action Mode: Light on/Dark on;
Stable and Over-Length Sensing Range: Anti-Interference;
Customization: Customization;
Detecting Object: Transparent, Translucent, Opaque Objects;
Light Source Wavelength: 650nm;
Detect Distance: 0.1~1.5m;
Light Source Type: Infrared;
Sensitivity: The Detection Distance Is Adjusted by Potentiomete;
Light: Infrared LED (Modulated Light);
Supply Voltage: 12~240V DC/AC;
Detection Distance: 60m;
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
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