| Specification |
Type: Diffuse Reflection Type Photoelectric Sensor;
Output Signal Type: Digital Type;
Production Process: Integration;
Material: Metal;
Feature: Corrosion Resistant;
IP Rating: IP67;
Customized: Non-Customized;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
