SMD · Optoelectronic Semiconductor · Compound Semiconductor
Customized Fz Undoped Silicon Wafer Single Crystal with High Resistivity 2-12inch Semiconductor Wafers
US$ 1-100
/ Piece
25 Pieces (MOQ)
25 Pieces (MOQ)
Customized FZ Undoped Silicon Wafer Single Crystal with High Resistivity 2-12 Inch Semiconductor wafers
1. what is Oxide silicon wafers and it's application:
The silicon thermal dioxide wafer refers to the thermal growth of a uniform dielectric film on the surface of the silicon wafer, which i
RoHS · Compound Semiconductor
Fz Ssp 6inch N-Type Undoped Silicon Wafers
25 Pieces (MOQ)
Product Description
1. what is silicon wafers and it's application:
A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices that enrich our lives.
Silicon wafer is the most common material and widely used for a varity of hig
Inp (Indium Phosphide) Semiconductor/Substrate Material Light Source/Detector/Optical Fiber Communication
US$ 50
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Product Description
Indium phosphide (InP)
Indium phosphide (InP) is one of the important iii-v compound semiconductor materials and a new generation of electronic functional materials after Si and GaAs.
Because the InP in melting point temperature to 1335 + 7 k, p extract from 27.5 ATM, so InP
- Seeopto Co., Ltd
- Sichuan, China
- Contact Now
Gallium Nitride GaN Template on Sapphire (0001) N-Type P-Type Semi-Insulating
US$ 1-100
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
Gallium Nitride GaN Template on Sapphire (0001) N-type P-type Semi-Insulating
1. What is templates
We use the term "template" to describe our products as they are different to substrates. Specifically, a template is a composite or engineered substrate, where one or more layers are added to the o
Promotion Price 8 12 Inch Undoped Low Defect Polishing Film Silicon Wafer
US$ 0.5-10
/ pcs
25 pcs (MOQ)
25 pcs (MOQ)
Production Description:
Promotion Price 8 12 Inch Undoped Low Defect Polishing Film Silicon Wafer
YSJ TECHNOLOGY provides numerous standard Single Side polished (SSP)wafer options, suitable for a
wide range of applications.We have a wide variety of Single Side Polished (SSP) Wafers in sto
- Fuzhou Ysj Technology Co., Ltd.
- Fujian, China
- Contact Now
Detector · RoHS · Optoelectronic Semiconductor
6 Inch Linbo3 Ln Wafer Y128° Single Side Polished and Blackened
US$ 55-69
/ Piece
10 Pieces (MOQ)
10 Pieces (MOQ)
Lithium niobate LiNbO 3
LN lithium niobate is an inorganic substance with a chemical formula of LiNbO 3 . It is a negative crystal and a ferroelectric crystal . The polarized lithium niobate crystal has piezoelectric, ferroelectric, photoelectric, nonlinear optics, thermoelectric, etc. A multi-fu
- Shanghai Opticrystal Materials Co., Ltd.
-
- Shanghai, China
- Contact Now
Detector · RoHS · Optoelectronic Semiconductor
Y42 D100*0.25 Litao3 Saw Filter Wafer
US$ 28-35
/ Piece
10 Pieces (MOQ)
10 Pieces (MOQ)
Lithium tantalate LiTaO 3
LT lithium tantalate LiTaO 3 crystal is an important multifunctional crystal material. The crystal has excellent piezoelectric, ferroelectric, acousto-optic and electro-optic effects , so it has become an important choice in the fields of surface acoustic wave SAW devi
- Shanghai Opticrystal Materials Co., Ltd.
-
- Shanghai, China
- Contact Now
2-Inch Self-Supporting GaN Wafer (undoped)
US$ 10-30
/ piece
10 piece (MOQ)
10 piece (MOQ)
GaN single crystal substrates for RF electronics
GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single cr
- Hangzhou HCJingRui Technology Co., Ltd.
- Zhejiang, China
- Contact Now
CCC · Power Electronic Components · Diode
4-Inch Self-Supporting GaN Wafer (undoped) LED China
US$ 10-30
/ piece
10 piece (MOQ)
10 piece (MOQ)
GaN single crystal substrates for RF electronics
GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substr
- Hangzhou HCJingRui Technology Co., Ltd.
- Zhejiang, China
- Contact Now
Compound Semiconductor · Optoelectronic Semiconductor · 2010+
2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped
US$ 300
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
GaN on Sapphire
Typical Structure Typical Specification:
1.undoped GaN GaN layer thickness up to 7μm on sapphire
2.n-type GaN(Si-doping) GaN layer thickness up to 7μm on sapphire
3.p-type GaN(Mg-doping)
- Jxt Technology Co., Ltd.
- Jiangsu, China
- Contact Now
-
What are common uses for Undoped Semiconductor products in the Electrical & Electronics industry?
Undoped Semiconductor products find application in various electronic devices like diodes, transistors, and solar cells in the Electrical & Electronics industry. A leading manufacturer of Undoped Semiconductors in China can provide you with products tailored to your specific needs.
-
How to identify reliable suppliers for Undoped Semiconductor products in China?
In your search for Undoped Semiconductor suppliers in China, rely on platforms such as B2B websites, trade shows, and industry referrals. Evaluate suppliers based on quality certifications, years in business, and customer reviews. Engaging with a trusted supplier is crucial for ensuring product quality.
-
What advantages come with manufacturing Undoped Semiconductor products in China?
Manufacturing Undoped Semiconductor products in China offers cost efficiency, technological expertise, and access to a vast supply chain network. Partnering with a prominent supplier significantly enhances the quality and product development process of Undoped Semiconductor solutions.
Compound Semiconductor · Optoelectronic Semiconductor · 2010+
4 Inch GaN on Silicon Epitaxial Wafer
US$ 1200
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
GaN on Silicon:
Typical Structure: Typical Specification:
1.undoped GaN GaN layer thickness up to 7μm on silicon(111)
2.n-type GaN(Si-doping) GaN layer thickness up to 7μm on silicon(111)
3.HEMT structures
- Jxt Technology Co., Ltd.
- Jiangsu, China
- Contact Now
4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate
US$ 2000
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
SPECIFICATION
Item
Free-standing GaN Wafer(2~4inch)
Diameter
50.8±0.3mm
76.2±0.3mm
100.0±0.3mm
Thickness
400±30μm
450±30μm
450±30μm
Surface Orientation
(0001) ± 0.2°Ga face
Off-cut
0.5°C-plane off angle toward M-axis
0.
- Jxt Technology Co., Ltd.
- Jiangsu, China
- Contact Now
2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)
US$ 1000
/ Piece
1 Piece (MOQ)
1 Piece (MOQ)
SPECIFICATION
Item
Free-standing GaN Wafer(2~4inch)
Diameter
50.8±0.3mm
76.2±0.3mm
100.0±0.3mm
Thickness
400±30μm
450±30μm
450±30μm
Surface Orientation
(0001) ± 0.2°Ga face
Off-cut
0.5°C-plane off angle toward M-axis
0.
- Jxt Technology Co., Ltd.
- Jiangsu, China
- Contact Now
Semiconductor Gallium Arsenide Wafer (GaAs Wafer)
1 Piece (MOQ)
Gallium Arsenide Wafer
Gallium Arsenide (GaAs) has high electron mobility. The GaAs substrate is commonly applied in light-emitting diodes, laser diodes, photovoltaic devices, high electron mobility transistors, and heterojunction bipolar transistors.
Gallium Arsenide Wafer Physical Properties
G
- Changsha Advanced Engineering Materials ...
- Hunan, China
- Contact Now
Haven't found what you want?
Product Alert
Subscribe to product alert and stay updated to what's new and popular on the market.